High-speed black phosphorus field-effect transistors approaching ballistic limit
نویسندگان
چکیده
منابع مشابه
Black phosphorus field-effect transistors.
Two-dimensional crystals have emerged as a class of materials that may impact future electronic technologies. Experimentally identifying and characterizing new functional two-dimensional materials is challenging, but also potentially rewarding. Here, we fabricate field-effect transistors based on few-layer black phosphorus crystals with thickness down to a few nanometres. Reliable transistor pe...
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We investigate electrical transport and optoelectronic properties of field effect transistors (FETs) made from few-layer black phosphorus (BP) crystals down to a few nanometers. In particular, we explore the anisotropic nature and photocurrent generation mechanisms in BP FETs through spatial-, polarization-, gate-, and bias-dependent photocurrent measurements. Our results reveal that the photoc...
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ژورنال
عنوان ژورنال: Science Advances
سال: 2019
ISSN: 2375-2548
DOI: 10.1126/sciadv.aau3194